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C1501 11EWA SB152M 4J1685J G12864 PEB2086 C74VC MAX10
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  Datasheet File OCR Text:
 BAS19...BAS21
Silicon Switching Diodes High-speed, high-voltage switching applications
3
1For
calculation of RthJA please refer to Application Note Thermal Resistance
1
1
2 1
3
EHA07002
VPS05161
Type BAS19 BAS20 BAS21
Maximum Ratings Parameter Diode reverse voltage BAS19 BAS20 BAS21 Peak reverse voltageBAS19 BAS20 BAS21 Forward current Peak forward current Total power dissipation TS = 70 C Junction temperature Storage temperature
Thermal Resistance Parameter
Marking JPs JRs JSs 1=A 1=A 1=A
Pin Configuration 2 = n.c. 2 = n.c. 2 = n.c. 3=C 3=C 3=C
Package SOT23 SOT23 SOT23
Symbol VR
Value 100 150 200
Unit V
VRM 120 200 250 IF IFM Ptot Tj Tstg 250 625 350 150 -65 ... 150 mW C mA
Symbol RthJS
Value
Unit
Junction - soldering point1)
230
K/W
Aug-06-2001
BAS19...BAS21
Electrical Characteristics at TA = 25C, unless otherwise specified Parameter DC Characteristics Breakdown voltage I(BR) = 100 A, BAS19 I(BR) = 100 A, BAS20 I(BR) = 100 A, BAS21 Reverse current VR = VRmax VR = VRmax , TA = 150 C Forward voltage IF = 100 mA IF = 200 mA
AC Characteristics Diode capacitanceVR = 0 V, f = 1 MHz Reverse recovery time IF = 30 mA, IR = 30 mA, measured at IR = 3 mA, trr 50 ns CT 5 pF
Symbol min. V(BR) 120 200 250 IR VF -
Values typ. max.
Unit
V A 0.1 100 V 1 1.25
Test circuit for reverse recovery time
EHN00018
2
Aug-06-2001
F
Oscillograph
Oscillograph: R = 50 , tr = 0.35 ns, C
D.U.T.
RL = 100
Pulse generator: tp = 1 s, D = 0.05, tr = 0.6 ns, Ri = 50
1 pF
BAS19...BAS21
Reverse current IR = VR = Parameter
10 2 A
BAS 19...21
IF = Parameter
EHB00027
1.5 V
BAS 19...21
R
10 1 5 max
VF
1.0
typ.
10 0
5
0.5
10 -1 5
10 -2
0
50
100 TA
C
150
0.0
0
50
TA = 25 C
800 mA 700 600 500 400 300 200 100
BAS 19...21
TA = 25 C
EHB00028
10 2
BAS 19...21
F
FM
A 10 1
D = 0.005 0.01 0.02 0.05 0.1 0.2
10 0
10 -1
tp
D= T
0
0.0
0.5
1.0
V VF
1.5
10-2 10-6
10-5
10-4
10-3
3
Forward current IF =
(VF)
Peak forward current IFM =
(TA )
Forward Voltage VF =
(TA)
EHB00029
F = 625 mA
250 mA 100 mA 10 mA
100 TA
C
150
(tp)
EHB00032
tp T
10-2
10-1 s 100
t
Aug-06-2001
BAS19...BAS21
Reverse voltage VR = (TA ) Permissible Pulse Load
300 V
BAS 19...21
EHB00031
10 2
200
BAS 21
IFmax/IFDC
VR
BAS 20
10 1
100
BAS 19
0
0
50
100 TA
C
150
10 0 -6 10
10
10 3
10 2
RthJS
10 1
10 0
10 -1 -6 10
10
-5
10
-4
10
-3
10
-2
Permissible Puls Load RthJS =
(tp )
D = 0.5 0.2 0.1 0.05 0.02 0.01 0.005 0
s
10
0
tP
4
-5
IFmax / IFDC =
(tp )
D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
10
-4
10
-3
10
-2
s
10
0
tP
Aug-06-2001


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